Fast Response GaAs Photodetector Based on Constructing Electron Transmission Channel

Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utili...

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Bibliographic Details
Published in:Crystals (Basel) 2021-10, Vol.11 (10), p.1160
Main Authors: Guo, Shuai, Chen, Xue, Wang, Dengkui, Fang, Xuan, Fang, Dan, Tang, Jilong, Liao, Lei, Wei, Zhipeng
Format: Article
Language:English
Subjects:
Electrodes
electron transmission channel
Electrons
fast response
GaAs 2D non-layer sheet
High speed
Lasers
Molecular beam epitaxy
Morphology
Nanowires
Performance evaluation
photodetector
Photometers
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Summary:Low-dimensional GaAs photodetectors have drawn a great deal of attention because of their unique absorption properties and superior responsivity. However, their slow response speed caused by surface states presents challenges. In this paper, a mixed-dimensional GaAs photodetector is fabricated utilizing a single GaAs nanowire (NW) and a GaAs 2D non-layer sheet (2DNLS). The photodetector exhibits a fast response with a rise time of ~4.7 ms and decay time of ~6.1 ms. The high-speed performance is attributed to an electron transmission channel at the interface between the GaAs NW and GaAs 2DNLS. Furthermore, the fast electron channel is confirmed by eliminating interface states via wet passivation. This work puts forward an effective way to realize a high-speed photodetector by utilizing the surface states of low-dimensional materials.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst11101160