Photovoltaic Characteristics of GaSe/MoSe2 Heterojunction Devices

• Published in: Nanoscale research letters 2021-11, Vol.16 (1), p.171-171, Article 171
• Main Authors: Ishikawa, Ryousuke, Ko, Pil Ju, Anzo, Ryoutaro, Woo, Chang Lim, Oh, Gilgu, Tsuboi, Nozomu
• Format: Article
• Language: English
• Subjects: 2D materials; Chemistry and Materials Science; Circuits; Current voltage characteristics; Electronics industry; Energy conversion; Energy conversion efficiency; GaSe; Graphene; Heterojunction; Heterojunction devices; Illuminance; Irradiation; Light intensity; Light irradiation; Luminous intensity; Materials Science; Molecular Medicine; Molybdenum compounds; MoSe2; N-type semiconductors; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Open circuit voltage; Optoelectronics; P-type semiconductors; Photovoltaic cells; Photovoltaics; Short circuit currents; Short-circuit current; Solar cell; Solar simulators; Substrates; Thickness; Titanium; Transition metals; Two dimensional materials; Voltage
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/s11671-021-03630-y

The two-dimensional materials have the thickness of an atomic layer level and are expected as alternative materials for future electronics and optoelectronics due to their specific properties. Especially recently, transition metal monochalcogenides and dichalcogenides have attracted attention. Since these materials have a band gap unlike graphene and exhibit a semiconductor property even in a single layer, application to a new flexible optoelectronics is expected. In this study, the photovoltaic characteristics of a GaSe/MoSe 2 heterojunction device using two-dimensional semiconductors, p-type GaSe and n-type MoSe 2 , were investigated. The heterojunction device was prepared by transferring GaSe and MoSe 2 onto the substrate which the titanium electrodes were fabricated through a mechanical peeling method. The current–voltage characteristics of the GaSe/MoSe 2 heterojunction device were measured in a dark condition and under light irradiation using a solar simulator. The irradiation light intensity was changed from 0.5 to 1.5 sun. It was found that when the illuminance was increased in this illuminance range, both the short-circuit current and the open-circuit voltage increased. The open-circuit voltage and the energy conversion efficiency were 0.41 V and 0.46% under 1.5 sun condition, respectively.