Effect of Dopants on Epitaxial Growth of Silicon Nanowires

We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertic...

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Bibliographic Details
Published in:Nanomaterials and Nanotechnology 2014-02, Vol.4 (Godište 2014), p.1
Main Authors: Chung, Sung Hwan, Ramadurgam, Sarath, Yang, Chen
Format: Article
Language:English
Subjects:
Dopant
Epitaxial Growth
Growth
Molecular beam epitaxy
Nanoparticles
Nanowires
Properties
Silicon
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Summary:We investigated the effects of dopants on epitaxial growth of Si NWs, with an emphasis on synthesizing vertical epitaxial Si NW arrays on Si (111) substrates. We found that addition of boron with a B:Si feed-in atomic ratio greater than 1:1000 improved the percentage of Si NWs grown along the vertical direction to more than 90%, compared to 38% for i-Si NWs. We also demonstrated a stemmed growth strategy and achieved a 93% percentage of i-Si NW segments along the vertical direction on Si substrates. In summary, our study opens up potential for using chemical synthesized vertical Si NW arrays integrated on Si substrates for large-scale applications.
ISSN:1847-9804
1847-9804
DOI:10.5772/58317