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Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping

Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation...

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Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2022-11, Vol.12 (23), p.4198
Main Authors: Sokolova, Anastasiia V, Skurlov, Ivan D, Babaev, Anton A, Perfenov, Peter S, Miropoltsev, Maksim A, Danilov, Denis V, Baranov, Mikhail A, Kolesnikov, Ilya E, Koroleva, Aleksandra V, Zhizhin, Evgeniy V, Litvin, Aleksandr P, Fedorov, Anatoly V, Cherevkov, Sergei A
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Language:English
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Summary:Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano12234198