Investigation and Comparison of the Performance for β-Ga2O3 Solar-Blind Photodetectors Grown on Patterned and Flat Sapphire Substrate

Ga2O3, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga2O3 was used as the substrate for epitaxial growth of Ga2O3. Here, the epitaxial layers of Ga2O3 were deposited by MOCVD on patterned sapphire s...

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Bibliographic Details
Published in:Crystals (Basel) 2024-07, Vol.14 (7), p.625
Main Authors: Yan, Zuyong, Li, Shan, Liu, Zeng, Yue, Jianying, Ji, Xueqiang, Wang, Jinjin, Hou, Shanglin, Wu, Gang, Lei, Jingli, Sun, Guobin, Li, Peigang, Tang, Weihua
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Epitaxial growth
Epitaxial layers
Ga2O3
Gallium oxides
Investigations
Light
Methods
Molecular beam epitaxy
Morphology
Organic chemicals
patterned sapphire substrates
photodetector
Photoelectric effect
Photoelectricity
Photometers
Sapphire
Single crystals
solar blind
Spectrum analysis
Substrates
Thin films
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Summary:Ga2O3, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga2O3 was used as the substrate for epitaxial growth of Ga2O3. Here, the epitaxial layers of Ga2O3 were deposited by MOCVD on patterned sapphire substrates. The structure of epitaxial Ga2O3 layers on patterned substrates has been identified by X-ray diffractometry. To investigate the influence of the patterned substrates on the formation of epitaxial layers, thin Ga2O3 layers were grown on a flat sapphire substrate under the same conditions. Both types of samples were β-phase. However, no improvement in the layers’ crystalline quality was discovered when utilizing patterned sapphire substrates. In addition, the performance of the obtained two types of Ga2O3 photodetectors was compared. The photoelectric properties, such as responsivity, response speed, and detection capability, were different in the case of flat samples.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst14070625