The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon

In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has...

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Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2023-02, Vol.13 (5), p.872
Main Authors: Crisci, Teresa, Maccagnani, Piera, Moretti, Luigi, Summonte, Caterina, Gioffrè, Mariano, Rizzoli, Rita, Casalino, Maurizio
Format: Article
Language:English
Subjects:
Amorphous silicon
Analysis
Current carriers
encapsulation
Graphene
Graphite
I.R. radiation
Illumination
Infrared detectors
Interfaces
near infrared
photodetector
Photometers
Photovoltaic cells
Quantum dots
Silicon
silicon photonics
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cited_by cdi_FETCH-LOGICAL-c518t-10e6077eacfc511b42e3e95909324eb98f0dc91fa1f15b986bb83d318d905c373
cites cdi_FETCH-LOGICAL-c518t-10e6077eacfc511b42e3e95909324eb98f0dc91fa1f15b986bb83d318d905c373
container_end_page
container_issue 5
container_start_page 872
container_title Nanomaterials (Basel, Switzerland)
container_volume 13
creator Crisci, Teresa
Maccagnani, Piera
Moretti, Luigi
Summonte, Caterina
Gioffrè, Mariano
Rizzoli, Rita
Casalino, Maurizio
description In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 μW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.
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fullrecord <record><control><sourceid>gale_doaj_</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_d95886ca345646abaafa09906bfef949</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A741845033</galeid><doaj_id>oai_doaj_org_article_d95886ca345646abaafa09906bfef949</doaj_id><sourcerecordid>A741845033</sourcerecordid><originalsourceid>FETCH-LOGICAL-c518t-10e6077eacfc511b42e3e95909324eb98f0dc91fa1f15b986bb83d318d905c373</originalsourceid><addsrcrecordid>eNpdksFu1DAQhiMEolXpjTOyxIUDW-w4TuITWlZtqVQEEuUcOfZ441ViL7YD2pfgmZntlmpLcsj49ze_M-MpiteMXnAu6QevfGCcCto25bPitKSNXFRSsudH8UlxntKG4iMZbwV_WZzwWlLeCHpa_LkbgHwbdsnpRHoYnDcko_QlmHlU2QVPgiUIxQljp8lqjhF8Js5jWsjBQAadQ0zkk0pgCCZcR7UdwAO5nHowBsUe8m8AT5ZTiNshzIkoPGcVdymrcXSIfnej08G_Kl5YNSY4f_ieFT-uLu9Wnxe3X69vVsvbhRaszQtGoaZNA0pbFFhflcBBCkklLyvoZWup0ZJZxSwTuKz7vuWGs9ZIKjRv-Flxc_A1QW26bXSTirsuKNfdCyGuOxWz0yN0Roq2rbXilairWvVKWUWlpHVvwcpKotfHg9d27icwGrsT1fjE9OmOd0O3Dr86hlci6pqjw7sHhxh-zpByN7mkYRyVB2xWVzZtjaXRZo--_Q_dhDl67NWeEiUaVhSpiwO1VliB8zbgwRpfA9O-zWAd6sumYm0lKN_bvj8k6BhSimAff5_Rbj9p3fGkIf7muORH-N9c8b8L3tBq</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2785205640</pqid></control><display><type>article</type><title>The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon</title><source>PubMed (Medline)</source><source>Publicly Available Content Database</source><creator>Crisci, Teresa ; Maccagnani, Piera ; Moretti, Luigi ; Summonte, Caterina ; Gioffrè, Mariano ; Rizzoli, Rita ; Casalino, Maurizio</creator><creatorcontrib>Crisci, Teresa ; Maccagnani, Piera ; Moretti, Luigi ; Summonte, Caterina ; Gioffrè, Mariano ; Rizzoli, Rita ; Casalino, Maurizio</creatorcontrib><description>In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 μW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.</description><identifier>ISSN: 2079-4991</identifier><identifier>EISSN: 2079-4991</identifier><identifier>DOI: 10.3390/nano13050872</identifier><identifier>PMID: 36903750</identifier><language>eng</language><publisher>Switzerland: MDPI AG</publisher><subject>Amorphous silicon ; Analysis ; Current carriers ; encapsulation ; Graphene ; Graphite ; I.R. radiation ; Illumination ; Infrared detectors ; Interfaces ; near infrared ; photodetector ; Photometers ; Photovoltaic cells ; Quantum dots ; Silicon ; silicon photonics</subject><ispartof>Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (5), p.872</ispartof><rights>COPYRIGHT 2023 MDPI AG</rights><rights>2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2023 by the authors. 2023</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c518t-10e6077eacfc511b42e3e95909324eb98f0dc91fa1f15b986bb83d318d905c373</citedby><cites>FETCH-LOGICAL-c518t-10e6077eacfc511b42e3e95909324eb98f0dc91fa1f15b986bb83d318d905c373</cites><orcidid>0000-0003-0288-0219 ; 0000-0002-2207-3660 ; 0000-0002-5618-7922 ; 0000-0003-2331-4419 ; 0000-0002-2276-9190 ; 0000-0002-4433-5377</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/2785205640/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/2785205640?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,25753,27924,27925,37012,37013,44590,53791,53793,75126</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36903750$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Crisci, Teresa</creatorcontrib><creatorcontrib>Maccagnani, Piera</creatorcontrib><creatorcontrib>Moretti, Luigi</creatorcontrib><creatorcontrib>Summonte, Caterina</creatorcontrib><creatorcontrib>Gioffrè, Mariano</creatorcontrib><creatorcontrib>Rizzoli, Rita</creatorcontrib><creatorcontrib>Casalino, Maurizio</creatorcontrib><title>The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon</title><title>Nanomaterials (Basel, Switzerland)</title><addtitle>Nanomaterials (Basel)</addtitle><description>In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 μW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.</description><subject>Amorphous silicon</subject><subject>Analysis</subject><subject>Current carriers</subject><subject>encapsulation</subject><subject>Graphene</subject><subject>Graphite</subject><subject>I.R. radiation</subject><subject>Illumination</subject><subject>Infrared detectors</subject><subject>Interfaces</subject><subject>near infrared</subject><subject>photodetector</subject><subject>Photometers</subject><subject>Photovoltaic cells</subject><subject>Quantum dots</subject><subject>Silicon</subject><subject>silicon photonics</subject><issn>2079-4991</issn><issn>2079-4991</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNpdksFu1DAQhiMEolXpjTOyxIUDW-w4TuITWlZtqVQEEuUcOfZ441ViL7YD2pfgmZntlmpLcsj49ze_M-MpiteMXnAu6QevfGCcCto25bPitKSNXFRSsudH8UlxntKG4iMZbwV_WZzwWlLeCHpa_LkbgHwbdsnpRHoYnDcko_QlmHlU2QVPgiUIxQljp8lqjhF8Js5jWsjBQAadQ0zkk0pgCCZcR7UdwAO5nHowBsUe8m8AT5ZTiNshzIkoPGcVdymrcXSIfnej08G_Kl5YNSY4f_ieFT-uLu9Wnxe3X69vVsvbhRaszQtGoaZNA0pbFFhflcBBCkklLyvoZWup0ZJZxSwTuKz7vuWGs9ZIKjRv-Flxc_A1QW26bXSTirsuKNfdCyGuOxWz0yN0Roq2rbXilairWvVKWUWlpHVvwcpKotfHg9d27icwGrsT1fjE9OmOd0O3Dr86hlci6pqjw7sHhxh-zpByN7mkYRyVB2xWVzZtjaXRZo--_Q_dhDl67NWeEiUaVhSpiwO1VliB8zbgwRpfA9O-zWAd6sumYm0lKN_bvj8k6BhSimAff5_Rbj9p3fGkIf7muORH-N9c8b8L3tBq</recordid><startdate>20230226</startdate><enddate>20230226</enddate><creator>Crisci, Teresa</creator><creator>Maccagnani, Piera</creator><creator>Moretti, Luigi</creator><creator>Summonte, Caterina</creator><creator>Gioffrè, Mariano</creator><creator>Rizzoli, Rita</creator><creator>Casalino, Maurizio</creator><general>MDPI AG</general><general>MDPI</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QO</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FH</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BBNVY</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>GNUQQ</scope><scope>H8D</scope><scope>H8G</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>JQ2</scope><scope>KB.</scope><scope>KR7</scope><scope>L7M</scope><scope>LK8</scope><scope>L~C</scope><scope>L~D</scope><scope>M7P</scope><scope>P64</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>7X8</scope><scope>5PM</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0003-0288-0219</orcidid><orcidid>https://orcid.org/0000-0002-2207-3660</orcidid><orcidid>https://orcid.org/0000-0002-5618-7922</orcidid><orcidid>https://orcid.org/0000-0003-2331-4419</orcidid><orcidid>https://orcid.org/0000-0002-2276-9190</orcidid><orcidid>https://orcid.org/0000-0002-4433-5377</orcidid></search><sort><creationdate>20230226</creationdate><title>The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon</title><author>Crisci, Teresa ; Maccagnani, Piera ; Moretti, Luigi ; Summonte, Caterina ; Gioffrè, Mariano ; Rizzoli, Rita ; Casalino, Maurizio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c518t-10e6077eacfc511b42e3e95909324eb98f0dc91fa1f15b986bb83d318d905c373</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Amorphous silicon</topic><topic>Analysis</topic><topic>Current carriers</topic><topic>encapsulation</topic><topic>Graphene</topic><topic>Graphite</topic><topic>I.R. radiation</topic><topic>Illumination</topic><topic>Infrared detectors</topic><topic>Interfaces</topic><topic>near infrared</topic><topic>photodetector</topic><topic>Photometers</topic><topic>Photovoltaic cells</topic><topic>Quantum dots</topic><topic>Silicon</topic><topic>silicon photonics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Crisci, Teresa</creatorcontrib><creatorcontrib>Maccagnani, Piera</creatorcontrib><creatorcontrib>Moretti, Luigi</creatorcontrib><creatorcontrib>Summonte, Caterina</creatorcontrib><creatorcontrib>Gioffrè, Mariano</creatorcontrib><creatorcontrib>Rizzoli, Rita</creatorcontrib><creatorcontrib>Casalino, Maurizio</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Biotechnology Research Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Business File</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>Biological Science Collection</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest Natural Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>ProQuest Central Student</collection><collection>Aerospace Database</collection><collection>Copper Technical Reference Library</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Materials Science Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Biological Science Collection</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>ProQuest Biological Science Journals</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Materials science collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><collection>Directory of Open Access Journals</collection><jtitle>Nanomaterials (Basel, Switzerland)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Crisci, Teresa</au><au>Maccagnani, Piera</au><au>Moretti, Luigi</au><au>Summonte, Caterina</au><au>Gioffrè, Mariano</au><au>Rizzoli, Rita</au><au>Casalino, Maurizio</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon</atitle><jtitle>Nanomaterials (Basel, Switzerland)</jtitle><addtitle>Nanomaterials (Basel)</addtitle><date>2023-02-26</date><risdate>2023</risdate><volume>13</volume><issue>5</issue><spage>872</spage><pages>872-</pages><issn>2079-4991</issn><eissn>2079-4991</eissn><abstract>In this work, we investigate a vertically illuminated near-infrared photodetector based on a graphene layer physically embedded between a crystalline and a hydrogenated silicon layer. Under near-infrared illumination, our devices show an unforeseen increase in the thermionic current. This effect has been ascribed to the lowering of the graphene/crystalline silicon Schottky barrier as the result of an upward shift in the graphene Fermi level induced by the charge carriers released from traps localized at the graphene/amorphous silicon interface under illumination. A complex model reproducing the experimental observations has been presented and discussed. Responsivity of our devices exhibits a maximum value of 27 mA/W at 1543 nm under an optical power of 8.7 μW, which could be further improved at lower optical power. Our findings offer new insights, highlighting at the same time a new detection mechanism which could be exploited for developing near-infrared silicon photodetectors suitable for power monitoring applications.</abstract><cop>Switzerland</cop><pub>MDPI AG</pub><pmid>36903750</pmid><doi>10.3390/nano13050872</doi><orcidid>https://orcid.org/0000-0003-0288-0219</orcidid><orcidid>https://orcid.org/0000-0002-2207-3660</orcidid><orcidid>https://orcid.org/0000-0002-5618-7922</orcidid><orcidid>https://orcid.org/0000-0003-2331-4419</orcidid><orcidid>https://orcid.org/0000-0002-2276-9190</orcidid><orcidid>https://orcid.org/0000-0002-4433-5377</orcidid><oa>free_for_read</oa></addata></record>
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2079-4991
language eng
recordid cdi_doaj_primary_oai_doaj_org_article_d95886ca345646abaafa09906bfef949
source PubMed (Medline); Publicly Available Content Database
subjects Amorphous silicon
Analysis
Current carriers
encapsulation
Graphene
Graphite
I.R. radiation
Illumination
Infrared detectors
Interfaces
near infrared
photodetector
Photometers
Photovoltaic cells
Quantum dots
Silicon
silicon photonics
title The Physics behind the Modulation of Thermionic Current in Photodetectors Based on Graphene Embedded between Amorphous and Crystalline Silicon
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T12%3A12%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Physics%20behind%20the%20Modulation%20of%20Thermionic%20Current%20in%20Photodetectors%20Based%20on%20Graphene%20Embedded%20between%20Amorphous%20and%20Crystalline%20Silicon&rft.jtitle=Nanomaterials%20(Basel,%20Switzerland)&rft.au=Crisci,%20Teresa&rft.date=2023-02-26&rft.volume=13&rft.issue=5&rft.spage=872&rft.pages=872-&rft.issn=2079-4991&rft.eissn=2079-4991&rft_id=info:doi/10.3390/nano13050872&rft_dat=%3Cgale_doaj_%3EA741845033%3C/gale_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c518t-10e6077eacfc511b42e3e95909324eb98f0dc91fa1f15b986bb83d318d905c373%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2785205640&rft_id=info:pmid/36903750&rft_galeid=A741845033&rfr_iscdi=true