Design of a Novel Compact Bandpass Filter Based on Low-Cost Through-Silicon-Via Technology

Three-dimensional (3D) integration based on through-silicon-via (TSV) technology provides a solution to the miniaturization of electronic systems. In this paper, novel integrated passive devices (IPDs) including capacitor, inductor, and bandpass filter are designed by employing TSV structures. For l...

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Bibliographic Details
Published in:Micromachines (Basel) 2023-06, Vol.14 (6), p.1251
Main Authors: Dong, Hai, Ding, Yingtao, Wang, Han, Pan, Xingling, Zhou, Mingrui, Zhang, Ziyue
Format: Article
Language:English
Subjects:
Bandpass filters
Capacitors
compact bandpass filter
Design
Economic aspects
Electric filters
Electronic systems
Glass substrates
Insertion loss
integrated passive device (IPD)
Internet of Things
Linings
Low cost
miniaturization
Production costs
Radio frequency
Semiconductors
Silicon
three-dimensional (3D) integration
through-silicon-via (TSV)
Topology
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Summary:Three-dimensional (3D) integration based on through-silicon-via (TSV) technology provides a solution to the miniaturization of electronic systems. In this paper, novel integrated passive devices (IPDs) including capacitor, inductor, and bandpass filter are designed by employing TSV structures. For lower manufacturing costs, polyimide (PI) liners are used in the TSVs. The influences of structural parameters of TSVs on the electrical performance of the TSV-based capacitor and inductor are individually evaluated. Moreover, with the topologies of capacitor and inductor elements, a compact third-order Butterworth bandpass filter with a central frequency of 2.4 GHz is developed, and the footprint is only 0.814 mm × 0.444 mm. The simulated 3-dB bandwidth of the filter is 410 MHz, and the fraction bandwidth (FBW) is 17%. Besides, the in-band insertion loss is less than 2.63 dB, and the return loss in the passband is better than 11.4 dB, showing good RF performance. Furthermore, as the filter is fully formed by identical TSVs, it not only features a simple architecture and low cost, but also provides a promising idea for facilitating the system integration and layout camouflaging of radio frequency (RF) devices.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi14061251