Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~10 cm on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by mo...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2018-06, Vol.18 (7), p.2065
Main Authors: Wang, Shibo, Wang, Xinqiang, Chen, Zhaoying, Wang, Ping, Qi, Qi, Zheng, Xiantong, Sheng, Bowen, Liu, Huapeng, Wang, Tao, Rong, Xin, Li, Mo, Zhang, Jian, Yang, Xuelin, Xu, Fujun, Shen, Bo
Format: Article
Language:English
Subjects:
hydrogen sensor
InN
Mg-doping
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Summary:It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~10 cm on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydrogen sensors based on Mg-doped InN films (InN:Mg) grown by molecular beam epitaxy has been investigated. The sensor exhibits a resistance variation ratio of 16.8% with response/recovery times of less than 2 min under exposure to 2000 ppm H₂/air at 125 °C, which is 60% higher in the magnitude of response than the one based on the as-grown InN film. Hall-effect measurement shows that the InN:Mg with suitable Mg doping level exhibits larger sheet resistance, which accords with buried p-type conduction in the InN bulk. This work shows the advantage of InN:Mg and signifies its potential for sensing application.
ISSN:1424-8220
1424-8220
DOI:10.3390/s18072065