Loading…
Surface properties of Al2O3:ZnO thin films growth on FTO for photovoltaic application
(x)Al2O3:(1−x)ZnO (x = 0,5,10%) were synthesized on conductive glass. The X-ray diffraction results showed a shift in the angle position of the peaks. The average crystallite size was found in the range 22.47–36.39 nm. The absorbance of Al2O3:ZnO thin film was measured in the 200–800 nm range of the...
Saved in:
Published in: | Next materials 2024-01, Vol.2, p.100069, Article 100069 |
---|---|
Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | (x)Al2O3:(1−x)ZnO (x = 0,5,10%) were synthesized on conductive glass. The X-ray diffraction results showed a shift in the angle position of the peaks. The average crystallite size was found in the range 22.47–36.39 nm. The absorbance of Al2O3:ZnO thin film was measured in the 200–800 nm range of the spectra, and the optical band gap around 3.26 eV. The Al2O3:ZnO thin films were investigated for their photovoltaic performance on solar cells. The maximum efficiency was 0.89% and the maximum short current circuit of 3.68 mA/cm2. |
---|---|
ISSN: | 2949-8228 2949-8228 |
DOI: | 10.1016/j.nxmate.2023.100069 |