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Surface properties of Al2O3:ZnO thin films growth on FTO for photovoltaic application

(x)Al2O3:(1−x)ZnO (x = 0,5,10%) were synthesized on conductive glass. The X-ray diffraction results showed a shift in the angle position of the peaks. The average crystallite size was found in the range 22.47–36.39 nm. The absorbance of Al2O3:ZnO thin film was measured in the 200–800 nm range of the...

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Bibliographic Details
Published in:Next materials 2024-01, Vol.2, p.100069, Article 100069
Main Authors: Nunes, Vanja Fontenele, Maia, Paulo Herbert França, Almeida, Ana Fabíola Leite, Freire, Francisco Nivaldo Aguiar
Format: Article
Language:English
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Summary:(x)Al2O3:(1−x)ZnO (x = 0,5,10%) were synthesized on conductive glass. The X-ray diffraction results showed a shift in the angle position of the peaks. The average crystallite size was found in the range 22.47–36.39 nm. The absorbance of Al2O3:ZnO thin film was measured in the 200–800 nm range of the spectra, and the optical band gap around 3.26 eV. The Al2O3:ZnO thin films were investigated for their photovoltaic performance on solar cells. The maximum efficiency was 0.89% and the maximum short current circuit of 3.68 mA/cm2.
ISSN:2949-8228
2949-8228
DOI:10.1016/j.nxmate.2023.100069