Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here...

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Bibliographic Details
Published in:APL materials 2017-02, Vol.5 (2), p.026107-026107-6
Main Authors: Cecchi, Stefano, Zallo, Eugenio, Momand, Jamo, Wang, Ruining, Kooi, Bart J., Verheijen, Marcel A., Calarco, Raffaella
Format: Article
Language:English
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Summary:Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.4976828