Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination...

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Bibliographic Details
Published in:Nanoscale research letters 2010-06, Vol.5 (8), p.1340-1343
Main Authors: Liu, J. M, Liu, X. L, Xu, X. Q, Wang, J, Li, C. M, Wei, H. Y, Yang, S. Y, Zhu, Q. S, Fan, Y. M, Zhang, X. W, Wang, Z. G
Format: Article
Language:English
Subjects:
Conduction band offset
Valence band offset
w-InN/h-BN heterojunction
X-ray photoelectron spectroscopy
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Summary:X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
ISSN:1931-7573
1556-276X
1556-276X
DOI:10.1186/1556-276X-5-1340