Feasibility of RF Sputtering and PIIID for production of thin films from red mud

During the extraction of aluminum from bauxite, a waste of oxides containing traces of heavy metals in a highly alkaline matrix, called Red Mud (RM), is produced. In this study RM is characterized and the feasibility of using it as a precursor for the production of thin films by Plasma Sputtering an...

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Published in:Materials research (São Carlos, São Paulo, Brazil) São Paulo, Brazil), 2014-10, Vol.17 (5), p.1316-1323
Main Authors: Antunes, Maria Lúcia Pereira, Cruz, Nilson Cristino da, Delgado, Adriana de Oliveira, Durrant, Steven Frederick, Bortoleto, José Roberto Ribeiro, Lima, Vivian Faria, Santana, Pericles Lopes, Caseli, Luciano, Rangel, Elidiane Cipriano
Format: Article
Language:English
Subjects:
Aluminum
Carbon
Contact angle
ENGINEERING, CHEMICAL
Feasibility
MATERIALS SCIENCE, MULTIDISCIPLINARY
METALLURGY & METALLURGICAL ENGINEERING
Oxides
PIIID
plasma sputtering
Red mud
Sputtering
Thin films
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Summary:During the extraction of aluminum from bauxite, a waste of oxides containing traces of heavy metals in a highly alkaline matrix, called Red Mud (RM), is produced. In this study RM is characterized and the feasibility of using it as a precursor for the production of thin films by Plasma Sputtering and by Plasma Immersion Ion Implantation and Deposition (PIIID) is demonstrated. The chemical structure and composition, surface morphology, topography, and wettability of the films prepared using such methodologies were investigated. The films consist mainly of the elements aluminum, silicon, iron and carbon. Infrared spectroscopic analyses reveal the presence of C=O, C-H sub(2), Fe(OH), Al-O and Si-C functionalities. RF Sputtering produced films with smoother surfaces, whereas PIIID produced granular surface structures. Surface contact angle measurements showed that despite the presence of oxides and hydroxides, the films are hydrophobic, thus exhibiting an interesting link between the physical and thermodynamical properties.
ISSN:1516-1439
1980-5373
1980-5373
DOI:10.1590/1516-1439.290714