Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices

Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored. Devices were demonstrated on indium tin oxide (ITO) coated glass and polyethylene naphtholate (PEN) subst...

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Bibliographic Details
Published in:Memories - Materials, Devices, Circuits and Systems Devices, Circuits and Systems, 2023-07, Vol.4, p.100029, Article 100029
Main Authors: Saini, Shalu, Dwivedi, Anurag, Lodhi, Anil, Khandelwal, Arpit, Tiwari, Shree Prakash
Format: Article
Language:English
Subjects:
Flexible electronics
Hybrid bilayer
Resistive random-access memory
Resistive switching
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Summary:Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored. Devices were demonstrated on indium tin oxide (ITO) coated glass and polyethylene naphtholate (PEN) substrates, with ITO acting as bottom electrode and Ag as top electrode for both rigid and flexible RRAM devices. The rigid devices exhibited excellent RS with very low SET and RESET voltages of ∼1 V and ∼−1.2 V, whereas the flexible devices showed average SET and RESET voltages of 1.5 V and −0.7 V. A decent repeatability was demonstrated with high on/off current ratios of more than 103 at reading voltage of 0.2 V for both types of devices. The flexible devices exhibited decent switching behavior even after bending up to a radius of 7 mm, indicating that PVP:MoS2 NC bilayer can be a promising candidate for the demonstration of high-performance RRAM devices for flexible electronics.
ISSN:2773-0646
2773-0646
DOI:10.1016/j.memori.2023.100029