Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the ca...

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Bibliographic Details
Published in:Crystals (Basel) 2021, Vol.11 (4), p.411
Main Authors: Kang, Chul, Lee, Gyuseok, Lee, Woo-Jung, Cho, Dae-Hyung, Maeng, Inhee, Chung, Yong-Duck, Kee, Chul-Sik
Format: Article
Language:English
Subjects:
carrier dynamics
CIGS
Copper indium gallium selenides
Current carriers
Electrical surges
Emission analysis
Energy
Ion implantation
Lasers
Optical properties
Photovoltaic cells
Radiation
terahertz
Thin films
ultrafast
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Summary:We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier–carrier scattering lifetimes and decrease the bandgap transition lifetime.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst11040411