Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure

We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs. The hole storage times...

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Published in:Journal of nanotechnology 2013-01, Vol.2013 (2013), p.1-4
Main Authors: Narodovitch, Michael, Nowozin, Tobias, Bonato, Leo, Bimberg, Dieter, Ajour, Mohammed N., Daqrouq, Khaled, Balamash, Abdullah
Format: Article
Language:English
Subjects:
Charge
Discharge
Hysteresis
Indium arsenides
MODFETs
Nanotechnology
Quantum dots
Semiconductor devices
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cited_by cdi_FETCH-LOGICAL-c493t-47e3060ca8035797a3db4df283fbcf51c5c585d311c943e6290915e06426e4f03
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creator Narodovitch, Michael
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description We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs. The hole storage times in the QDs decrease from seconds at 200 K down to milliseconds at room temperature.
doi_str_mv 10.1155/2013/797964
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subjects Charge
Discharge
Hysteresis
Indium arsenides
MODFETs
Nanotechnology
Quantum dots
Semiconductor devices
title Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure
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