Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

• Published in: Nanoscale research letters 2019-04, Vol.14 (1), p.139-10, Article 139
• Main Authors: Hsu, Chia-Hsun, Cho, Yun-Shao, Wu, Wan-Yu, Lien, Shui-Yang, Zhang, Xiao-Ying, Zhu, Wen-Zhang, Zhang, Sam, Chen, Song-Yan
• Format: Article
• Language: English
• Subjects: Aluminum; Aluminum oxide; Annealing; Applications of Atomic Layer Deposition; Atomic layer deposition; Atomic layer epitaxy; Capacitance; Carrier lifetime; Chemistry and Materials Science; Deionization; Electrical measurement; Emitters; Materials Science; Minority carriers; Molecular Medicine; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Organic chemistry; Oxygen; Passivated emitter and rear cell; Passivation; Passivity; Photovoltaic cells; Solar cells; Two-step annealing
• ISSN: 1931-7573; 1556-276X
• DOI: 10.1186/s11671-019-2969-z

In this study, aluminum oxide (Al 2 O 3 ) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O 2 ), forming gas (FG), or two-step annealing. Minority carrier lifetime of the samples was measured by Sinton WCT-120. Field-effect passivation and chemical passivation were evaluated by fixed oxide charge ( Q f ) and interface defect density ( D it ), respectively, using capacitance-voltage measurement. The results show that O 2 annealing gives a high Q f of − 3.9 × 10 12  cm −2 , whereas FG annealing leads to excellent Si interface hydrogenation with a low D it of 3.7 × 10 11  eV −1  cm −2 . Based on the consideration of the best field-effect passivation brought by oxygen annealing and the best chemical passivation brought by forming gas, the two-step annealing process was optimized. It is verified that the Al 2 O 3 film annealed sequentially in oxygen and then in forming gas exhibits a high Q f (2.4 × 10 12  cm −2 ) and a low D it (3.1 × 10 11  eV −1  cm −2 ), yielding the best minority carrier lifetime of 1097 μs. The SiN x /Al 2 O 3 passivation stack with two-step annealing has a lifetime of 2072 μs, close to the intrinsic lifetime limit. Finally, the passivated emitter and rear cell conversion efficiency was improved from 21.61% by using an industry annealing process to 21.97% by using the two-step annealing process.