Evaluation of the Nanodomain Structure in In-Zn-O Transparent Conductors

The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn In O (IZO) by characterizing the specific locat...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-01, Vol.11 (1), p.198
Main Authors: García-Fernández, Javier, Torres-Pardo, Almudena, Ramírez-Castellanos, Julio, Rossell, Marta D, González-Calbet, José M
Format: Article
Language:English
Subjects:
(Cs)-corrected electron microscopy
geometric phase analysis
nano-characterization
ZnkIn2Ok+3 homologous series
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Summary:The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series Zn In O (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of is discussed, even in the lowest term of the series ( = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In are evaluated.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11010198