High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction

We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous...

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Bibliographic Details
Published in:IEEE photonics journal 2021-06, Vol.13 (3), p.1-8
Main Authors: Zhao, Yuliang, Wang, Zhenfu, Demir, Abdullah, Yang, Guowen, Ma, Shufang, Xu, Bingshe, Sun, Cheng, Li, Bo, Qiu, Bocang
Format: Article
Language:English
Subjects:
Active regions (lasers)
Bars
Continuous radiation
diode laser bar
Diode lasers
Efficiency
Energy conversion efficiency
Epitaxial growth
Heat sinks
high power
Junctions
Maximum power
power conversion efficiency
Power lasers
Pulse duration
Quantum cascade lasers
Rollover
Semiconductor laser
Semiconductor lasers
tunnel junction
Tunnel junctions
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Summary:We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous wave (QCW) peak power of 1.91 kW at 25 °C was demonstrated from a 1-cm wide bar with a 2-mm cavity length at 1 kA drive current (200 μs pulse width and 10 Hz repetition rate). Below the onset of the thermal rollover, the slope efficiency was as high as 2.23 W/A. The maximum power conversion efficiency of 61.1% at 25 °C was measured at 300 A. Reducing the heatsink temperature to 15 °C led to a marginal increase in the peak power to 1.95 kW.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2021.3073732