Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect

This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical pr...

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Bibliographic Details
Published in:Applied sciences 2019-09, Vol.9 (17), p.3610
Main Authors: Hwang, In-Tae, Jang, Kyu-Won, Kim, Hyun-Jung, Lee, Sang-Heung, Lim, Jong-Won, Yang, Jin-Mo, Kwon, Ho-Sang, Kim, Hyun-Seok
Format: Article
Language:English
Subjects:
Aluminum oxide
breakdown voltage
Composition effects
Conductivity
Current leakage
Dielectrics
Electric fields
Electrical properties
Electron gas
Electrons
Gallium nitrides
GaN
gate leakage current
Heat conductivity
Heating
High electron mobility transistors
High temperature effects
Insulators
Leakage
Leakage current
metal-insulator-semiconductor high electron mobility transistor
MIS (semiconductors)
Mobility
Semiconductor devices
Temperature
Thickness
Transconductance
Transistors
two-dimensional electron gas
Voltage
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Summary:This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimensional simulation. We first compared electrical properties, including threshold voltage, transconductance, and gate leakage current with the self-heating effect, by applying a single Si3N4 dielectric layer. We then employed different Al2O3 dielectric layer thicknesses on top of the Si3N4, and also investigated lattice temperature across a two-dimensional electron gas channel layer with various dielectric layer compositions to verify the thermal effect on gate leakage current. Gate leakage current was significantly reduced as the dielectric layer was added, and further decreased for a 15-nm thick Al2O3 on a 5-nm Si3N4 structure. Although the gate leakage current increased as Al2O3 thickness increased to 35 nm, the breakdown voltage was improved.
ISSN:2076-3417
2076-3417
DOI:10.3390/app9173610