Research of synthesis conditions and structural features of heterostructure AlXGa1-XAs/GaAs of the “desert rose” type

In this study, we report the synthesis of the heterostructure by a simple and inexpensive electrochemical deposition method. As a result, nanocrystallites of the "desert rose" type were synthesized on the surface of mono-GaAs. According to research results, it was established that the AlxG...

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Bibliographic Details
Published in:Applied surface science advances 2022-12, Vol.12, p.100327, Article 100327
Main Authors: Suchikova, Yana, Kovachov, Sergii, Lazarenko, Andriy, Bohdanov, Ihor
Format: Article
Language:English
Subjects:
Aluminum arsenide
Aluminum gallium arsenide
Crystal lattice
Desert rose
Gallium arsenide
Heterostructure
Morphology
Nanostructure
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Summary:In this study, we report the synthesis of the heterostructure by a simple and inexpensive electrochemical deposition method. As a result, nanocrystallites of the "desert rose" type were synthesized on the surface of mono-GaAs. According to research results, it was established that the AlxGa1–xAs/GaAs heterostructure has a "soft" transitional porous layer, which ensures excellent quality of nanostructures and good adhesion to the crystal surface. Furthermore, it is shown that semiconductors GaAs and AlAs are extreme cases of AlxGa1-xAs at x=0 and x=1, respectively. These semiconductors have almost identical crystal lattice parameters. Therefore, GaAs can be considered an ideal substrate to grow the AlxGa1-xAs/GaAs heterostructure. Such structures can find interesting fields of application because of their developed morphology and large effective area. [Display omitted]
ISSN:2666-5239
2666-5239
DOI:10.1016/j.apsadv.2022.100327