Probing buried interfaces in SiOxNy thin films via ultrafast acoustics: The role transducing layer thickness

Probing buried interfaces in thin films is a crucial task in many fields, including optical coating. Ultrafast acoustics provide a means to characterize the interfaces by using an acoustic wave localized on the nanometer scale. We provide a brief overview of our thorough study of the interface betwe...

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Published in:EPJ Web of conferences 2023-01, Vol.287, p.05014
Main Authors: Tauchmanová Martina, Mokrý Pavel, Kanclíř Vít, Václavík Jan, Veselá Petra, Žídek Karel
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Mokrý Pavel
Kanclíř Vít
Václavík Jan
Veselá Petra
Žídek Karel
description Probing buried interfaces in thin films is a crucial task in many fields, including optical coating. Ultrafast acoustics provide a means to characterize the interfaces by using an acoustic wave localized on the nanometer scale. We provide a brief overview of our thorough study of the interface between SiOxNy thin films and Si substrate by using both single-color and broadband picosecond acoustics. The experiment allows us to track the effect of stoichiometry on the acoustics wave propagation and transition over the layer-substrate interface. To optimize the experiment, we also created simulations to study the effect of optoacoustic layer thickness. We show that the used Ti layer features an optimum thickness between 5-10 nm to reveal details of the interface properties.
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title Probing buried interfaces in SiOxNy thin films via ultrafast acoustics: The role transducing layer thickness
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