Enhanced Optical and Electrical Properties of IGZO/Ag/IGZO for Solar Cell Application via Post-Rapid Thermal Annealing

In this paper, we optimized IGZO/Ag/IGZO (IAI) multilayer films by post-rapid thermal annealing (RTA) to enhance the electrical conductivity and optical transmittance in visible wavelengths for solar cell applications. Our optimized device showed an average transmittance of 85% in the visible range,...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2024-11, Vol.14 (22), p.1841
Main Authors: Hwang, Chanmin, Kim, Taegi, Jang, Yuseong, Lee, Doowon, Kim, Hee-Dong
Format: Article
Language:English
Subjects:
Annealing
Efficiency
Electric properties
Electrical conductivity
Electrical properties
Electrical resistivity
Electrons
Glass substrates
Grain size
Indium
Indium gallium zinc oxide
Light penetration
Multilayers
Optical properties
Photovoltaic cells
RTA
Short circuit currents
Short-circuit current
Simulation
solar cell application
Solar cells
TCO
Temperature
Toxicity
Transmittance
Wavelengths
Zinc oxides
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Summary:In this paper, we optimized IGZO/Ag/IGZO (IAI) multilayer films by post-rapid thermal annealing (RTA) to enhance the electrical conductivity and optical transmittance in visible wavelengths for solar cell applications. Our optimized device showed an average transmittance of 85% in the visible range, with a lowest sheet resistance of 6.03 Ω/□ when annealed at 500 °C for 60 s. Based on these results, we assessed our device with photo-generated short circuit current density (J ) using a solar cell simulator to confirm its applicability in the solar cell. IAI multilayer RTA at 500 °C for 60 s showed a highest J of 40.73 mA/cm . These results show that our proposed IAI multilayer film, which showed a high optical transparency and electrical conductivity optimized with post RTA, seems to be excellent transparent electrode for solar cell applications.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano14221841