Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

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Bibliographic Details
Published in:Scientific reports 2021-12, Vol.11 (1), p.23667-23667, Article 23667
Main Authors: Amir, Walid, Shin, Ju‑Won, Shin, Ki‑Yong, Kim, Jae‑Moo, Cho, Chu‑Young, Park, Kyung‑Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae‑Woo
Format: Article
Language:English
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Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-02854-3