Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals

Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impuritie...

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Bibliographic Details
Published in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2017-04, Vol.20 (1), p.123-128
Main Author: Gaidar, G.P.
Format: Article
Language:English
Subjects:
anisotropy parameter of mobility
anisotropy parameter of thermo-emf
charge carrier concentration
germanium
silicon
tenso-thermo-emf
thermoelectromotive force (thermo-emf)
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Summary:Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impurities in the germanium crystals up to the concentrations of  1015 cm 3 was found, whereas in silicon with increasing the doping level the monotonic decrease in this parameter was observed. The significantly lower absolute values of the parameter M were obtained for the silicon crystals as compared with the corresponding values of this parameter for the germanium ones. The physical nature of the identified effects was explained.
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo20.01.123