Towards super-clean graphene

Impurities produced during the synthesis process of a material pose detrimental impacts upon the intrinsic properties and device performances of the as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been a critical, unresolved issue, given gr...

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Bibliographic Details
Published in:Nature communications 2019-04, Vol.10 (1), p.1912-1912, Article 1912
Main Authors: Lin, Li, Zhang, Jincan, Su, Haisheng, Li, Jiayu, Sun, Luzhao, Wang, Zihao, Xu, Fan, Liu, Chang, Lopatin, Sergei, Zhu, Yihan, Jia, Kaicheng, Chen, Shulin, Rui, Dingran, Sun, Jingyu, Xue, Ruiwen, Gao, Peng, Kang, Ning, Han, Yu, Xu, H. Q., Cao, Yang, Novoselov, K. S., Tian, Zhongqun, Ren, Bin, Peng, Hailin, Liu, Zhongfan
Format: Article
Language:English
Subjects:
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Chemical vapor deposition
Contact resistance
Contamination
Electric contacts
Electrical resistivity
Graphene
High temperature
Humanities and Social Sciences
Impurities
multidisciplinary
Science
Science (multidisciplinary)
Substrates
Synthesis
Thermal conductivity
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Summary:Impurities produced during the synthesis process of a material pose detrimental impacts upon the intrinsic properties and device performances of the as-obtained product. This effect is especially pronounced in graphene, where surface contamination has long been a critical, unresolved issue, given graphene’s two-dimensionality. Here we report the origins of surface contamination of graphene, which is primarily rooted in chemical vapour deposition production at elevated temperatures, rather than during transfer and storage. In turn, we demonstrate a design of Cu substrate architecture towards the scalable production of super-clean graphene (>99% clean regions). The readily available, super-clean graphene sheets contribute to an enhancement in the optical transparency and thermal conductivity, an exceptionally lower-level of electrical contact resistance and intrinsically hydrophilic nature. This work not only opens up frontiers for graphene growth but also provides exciting opportunities for the utilization of as-obtained super-clean graphene films for advanced applications. The intrinsic properties of graphene and the resulting device performance are hindered by the impurities produced during the synthesis process. Here, the authors elucidate the origin of contaminations in CVD-grown graphene and devise a strategy towards the scalable production of ultra-clean graphene with >99% clean regions and low contact resistance.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-019-09565-4