Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

• Published in: Nanoscale research letters 2020-06, Vol.15 (1), p.136-136, Article 136
• Main Authors: Khan, Muhammad Farooq, Rehman, Shania, Rehman, Malik Abdul, Basit, Muhammad Abdul, Kim, Deok-kee, Ahmed, Faisal, Khalil, H. M. Waseem, Akhtar, Imtisal, Jun, Seong Chan
• Format: Article
• Language: English
• Subjects: Annealing; Bilayers; Chemistry and Materials Science; Doping; Feature recognition; Ferromagnetic materials; Graphene; Heterostack; Hybrid structures; Interfaces; Intermetallic compounds; Iron compounds; Layered materials; Magnetic materials; Magnetic properties; Magnetism; Magnetoresistance; Magnetoresistivity; Materials Science; Metals; Metals doping; Molecular Medicine; Molybdenum compounds; Monolayers; MoSe2; Nano Express; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Nickel compounds; Polarity; Polarization (spin alignment); Spin valves; Spin-valve junction; Transport properties; Two dimensional materials
• ISSN: 1556-276X; 1931-7573; 1556-276X
• DOI: 10.1186/s11671-020-03365-2

Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it an ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, have been recognized as unique features of spin transport polarization. However, the magnetotransport properties of SVJs are highly influenced by the type of intervening layer (spacer) inserted between the ferromagnetic materials (FMs). In this situation, the spin filtering effect at the interfaces plays a critical role in the observation of the magnetoresistance (MR) of such magnetic structures, which can be improved by using promising hybrid structure. Here, we report MR of bilayer graphene (BLG), single-layer MoSe 2 (SL-MoSe 2 ), and BLG/SL-MoSe 2 heterostack SVJs. However, before annealing, BLG and SL-MoSe 2 SVJs demonstrate positive MR, but after annealing, BLG reverses its polarity while the SL-MoSe 2 maintains its polarity and demonstrated stable positive spin polarizations at both interfaces due to meager doping effect of ferromagnetic (FM) contacts. Further, Co/BLG/SL-MoSe 2 /NiFe determines positive MR, i.e., ~ 1.71% and ~ 1.86% at T = 4 K before and after annealing, respectively. On the contrary, NiFe/BLG/SL-MoSe 2 /Co SVJs showed positive MR before annealing and subsequently reversed its MR sign after annealing due to the proximity-induced effect of metals doping with graphene. The obtained results can be useful to comprehend the origin of polarity and the selection of non-magnetic material (spacer) for magnetotransport properties. Thus, this study established a new paragon for novel spintronic applications.