Synergistic Enhancement of Carrier Migration by SnO2/ZnO@GO Heterojunction for Rapid Degradation of RhB

Organic dyes in natural waters jeopardize human health. Whether semiconductor materials can effectively degrade dyes has become a challenge for scientific research. Based on this, this study rationally prepared different nanocomposites to remove organic dyes effectively. Pure SnO2 quantum dots, ZnO...

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Published in:Molecules (Basel, Switzerland) Switzerland), 2024-02, Vol.29 (4), p.854
Main Authors: Chen, Pengfei, Li, Jin, Wang, Jianing, Deng, Lihan
Format: Article
Language:English
Subjects:
Adsorption
Carbon
Composite materials
Dyes
Graphene
heterojunctions
Metal oxides
Morphology
Oxidation
Photocatalysis
Pollutants
Quantum dots
rhodamine B
Semiconductors
SnO2/ZnO@GO
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Summary:Organic dyes in natural waters jeopardize human health. Whether semiconductor materials can effectively degrade dyes has become a challenge for scientific research. Based on this, this study rationally prepared different nanocomposites to remove organic dyes effectively. Pure SnO2 quantum dots, ZnO nanosheets, and SnO2/ZnO (ZS) binary nanocomposites are prepared using the hydrothermal method. Subsequently, SnO2/ZnO@GO (ZSG) ternary composites containing different amounts of GO, i.e., ZSG-5, ZSG-15, and ZSG-25, are synthesized by an ultrasonic water bath method, in which ZS was coupled with GO to form Z-type heterojunctions. The ZSG-15 ternary composites exhibited excellent photocatalytic activity for the degradation of rhodamine B by simulating sunlight. The test results show that the degradation rate of ZSG-15 is about 7.6 times higher than ZnO. The increase in photocatalytic activity is attributed to the synergistic effect of SnO2 and GO to improve the separation efficiency of photogenerated carriers in ZnO. Notably, the large specific surface area of GO increases the reactive sites. Compared with binary nanocomposites, ZSG-15 broadens the response range to light while further accelerating the electron transport rate and improving the photoelectric stability.
ISSN:1420-3049
1420-3049
DOI:10.3390/molecules29040854