Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors

Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes...

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Published in:ACS omega 2024-06, Vol.9 (24), p.25429-25447
Main Authors: Wang, Lixia, Xu, Shengming, Yang, Jiangang, Huang, Hui, Huo, Zhe, Li, Jing, Xu, Xin, Ren, Feng, He, Yunbin, Ma, Yaping, Zhang, Weifeng, Xiao, Xudong
Format: Article
Language:English
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Summary:Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind photodetectors (SBPDs). This review comprehensively examines recent advancements in UWBG semiconductor-based SBPDs across various device architectures, encompassing photoconductors, metal–semiconductor-metal photodetectors, Schottky photodiodes, p-n (p-i-n) photodiodes, phototransistors, etc., with a systematic introduction and discussion of their operational principles. The current state of device performance for SBPDs employing these UWBG semiconductors is evaluated across different device configurations. Finally, this review outlines key challenges to be addressed, aiming to steer future research endeavors in this critical domain.
ISSN:2470-1343
2470-1343
DOI:10.1021/acsomega.4c02897