Photoelectric properties of SnO2: Ag/P-Si heterojunction photodetector

N-type Tin dioxide thin films with thickness (350 nm) prepared by thermal evaporation method. The thin film SnO2 was doped with Ag by the rate (0.01, 0.02 and 0.03). Atomic Force Microscopic (AFM) was adopted to determine the grain size and roughness of the film surface. The electrical properties we...

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Bibliographic Details
Published in:Energy reports 2020-02, Vol.6 (3), p.46-54
Main Authors: Hassun, Hanan K, Hussein, Bushra H, Salman, Ebtisam M.T, Shaban, Auday H
Format: Article
Language:English
Subjects:
Ag/P-Si
Detector
Mobility
Quantum efficiency
SnO2
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Summary:N-type Tin dioxide thin films with thickness (350 nm) prepared by thermal evaporation method. The thin film SnO2 was doped with Ag by the rate (0.01, 0.02 and 0.03). Atomic Force Microscopic (AFM) was adopted to determine the grain size and roughness of the film surface. The electrical properties were determined by mean of Hall Measurement system and mobility was calculated. SnO2: Ag/P–Si​ photodetectors demonstration the highest described visible responsivity of (0.287 A/W) with the Ag ratio of (0.03). I–V characteristics with different power density were measured. The best sensitive value of the spectral response, specific detectivity and quantum efficiency at wavelength (422 nm).
ISSN:2352-4847
2352-4847
DOI:10.1016/j.egyr.2019.10.017