Gate field controlled and temperature dependent quantum transport in (10,0) carbon nanotube field effect transistor

The cylindrically gated (10,0) carbon nanotube field effect transistor having n-i-n device structure has been simulated by using the non-equilibrium Green function method and self-consistent calculations. The gate bias polarity and device temperature have been found to significantly influence the dr...

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Bibliographic Details
Published in:AIP advances 2018-11, Vol.8 (11), p.115214-115214-7
Main Authors: Singh, Tapender, Sastri, O. S. K. S., Rai, Padmnabh
Format: Article
Language:English
Subjects:
Carbon nanotubes
Field effect transistors
Green's functions
Polarity
Quantum transport
Semiconductor devices
Temperature dependence
Temperature effects
Thermionic emission
Transistors
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Summary:The cylindrically gated (10,0) carbon nanotube field effect transistor having n-i-n device structure has been simulated by using the non-equilibrium Green function method and self-consistent calculations. The gate bias polarity and device temperature have been found to significantly influence the drain current obtained from energy-position resolved current spectrum under ballistic transport limit through simulations. The effect of temperature on drain current is seen to be more pronounced in thermionic emission as compared to band-to-band tunnelling.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.5050668