Gate field controlled and temperature dependent quantum transport in (10,0) carbon nanotube field effect transistor

The cylindrically gated (10,0) carbon nanotube field effect transistor having n-i-n device structure has been simulated by using the non-equilibrium Green function method and self-consistent calculations. The gate bias polarity and device temperature have been found to significantly influence the dr...

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Published in:AIP advances 2018-11, Vol.8 (11), p.115214-115214-7
Main Authors: Singh, Tapender, Sastri, O. S. K. S., Rai, Padmnabh
Format: Article
Language:English
Subjects:
Carbon nanotubes
Field effect transistors
Green's functions
Polarity
Quantum transport
Semiconductor devices
Temperature dependence
Temperature effects
Thermionic emission
Transistors
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description The cylindrically gated (10,0) carbon nanotube field effect transistor having n-i-n device structure has been simulated by using the non-equilibrium Green function method and self-consistent calculations. The gate bias polarity and device temperature have been found to significantly influence the drain current obtained from energy-position resolved current spectrum under ballistic transport limit through simulations. The effect of temperature on drain current is seen to be more pronounced in thermionic emission as compared to band-to-band tunnelling.
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subjects Carbon nanotubes
Field effect transistors
Green's functions
Polarity
Quantum transport
Semiconductor devices
Temperature dependence
Temperature effects
Thermionic emission
Transistors
title Gate field controlled and temperature dependent quantum transport in (10,0) carbon nanotube field effect transistor
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