Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe

Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating t...

Full description

Saved in:
Bibliographic Details
Published in:Nanoscale research letters 2019-10, Vol.14 (1), p.1-8, Article 322
Main Authors: Xiao, Xian-Bo, Ye, Qian, Liu, Zheng-Fang, Wu, Qing-Ping, Li, Yuan, Ai, Guo-Ping
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Electric field
Electric field strength
Electric fields
Energy gap
Indirect-direct-indirect band gap transition
Materials Science
Molecular Medicine
Monolayer InSe
Monolayers
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
Optoelectronic devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electronic structures of monolayer InSe with a perpendicular electric field are investigated. Indirect-direct-indirect band gap transition is found in monolayer InSe as the electric field strength is increased continuously. Meanwhile, the global band gap is suppressed gradually to zero, indicating that semiconductor-metal transformation happens. The underlying mechanisms are revealed by analyzing both the orbital contributions to energy band and evolution of band edges. These findings may not only facilitate our further understanding of electronic characteristics of layered group III-VI semiconductors, but also provide useful guidance for designing optoelectronic devices.
ISSN:1931-7573
1556-276X
DOI:10.1186/s11671-019-3162-0