Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was o...

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Bibliographic Details
Published in:Opto-Electronic Advances 2020-01, Vol.3 (4), p.19002501-19002506
Main Authors: Raj Kumar Kalapala, Akhil, Liu, Dong, June Cho, Sang, Park, Jeongpil, Zhao, Deyin, D. Albrecht, John, Moody, Baxter, Ma, Zhenqiang, Zhou, Weidong
Format: Article
Language:English
Subjects:
Active regions (lasers)
algan
aln substrate
Aluminum gallium nitrides
Design
Epitaxial growth
Excimer lasers
Excimers
High temperature
Lasers
Low pressure
Metalorganic chemical vapor deposition
optically pumped
Point defects
Quality
Quantum wells
Room temperature
Spectrum analysis
Substrates
Ultraviolet lasers
uv edge emitting laser
Vapor phases
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Summary:We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV Excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.
ISSN:2096-4579
DOI:10.29026/oea.2020.190025