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Anion redox as a means to derive layered manganese oxychalcogenides with exotic intergrowth structures

Topochemistry enables step-by-step conversions of solid-state materials often leading to metastable structures that retain initial structural motifs. Recent advances in this field revealed many examples where relatively bulky anionic constituents were actively involved in redox reactions during (de)...

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Bibliographic Details
Published in:Nature communications 2023-05, Vol.14 (1), p.2917-2917, Article 2917
Main Authors: Sasaki, Shunsuke, Giri, Souvik, Cassidy, Simon J., Dey, Sunita, Batuk, Maria, Vandemeulebroucke, Daphne, Cibin, Giannantonio, Smith, Ronald I., Holdship, Philip, Grey, Clare P., Hadermann, Joke, Clarke, Simon J.
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Language:English
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Summary:Topochemistry enables step-by-step conversions of solid-state materials often leading to metastable structures that retain initial structural motifs. Recent advances in this field revealed many examples where relatively bulky anionic constituents were actively involved in redox reactions during (de)intercalation processes. Such reactions are often accompanied by anion-anion bond formation, which heralds possibilities to design novel structure types disparate from known precursors, in a controlled manner. Here we present the multistep conversion of layered oxychalcogenides Sr 2 MnO 2 Cu 1.5 Ch 2 ( Ch  = S, Se) into Cu-deintercalated phases where antifluorite type [Cu 1.5 Ch 2 ] 2.5- slabs collapsed into two-dimensional arrays of chalcogen dimers. The collapse of the chalcogenide layers on deintercalation led to various stacking types of Sr 2 MnO 2 Ch 2 slabs, which formed polychalcogenide structures unattainable by conventional high-temperature syntheses. Anion-redox topochemistry is demonstrated to be of interest not only for electrochemical applications but also as a means to design complex layered architectures. Low temperature chemical transformations of solids using high-energy intermediates have enabled the synthesis of a new series of layered oxide chalcogenide containing oxidised chalcogenide dimers promising a new range of solids.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-023-38489-3