Low-Stress and Optimum Design of Boost Converter for Renewable Energy Systems

• Published in: Micromachines (Basel) 2022-07, Vol.13 (7), p.1085
• Main Authors: Salim, Kashmala, Asif, Muhammad, Ali, Farman, Armghan, Ammar, Ullah, Nasim, Mohammad, Al-Sharef, Al Ahmadi, Ahmad Aziz
• Format: Article
• Language: English
• Subjects: Alternative energy sources; Arrays; Control algorithms; DC–DC converters; Efficiency; Electric bridges; Electric power systems; Energy resources; Field effect transistors; Flyback boost converter using GaN-HEMT switch technology; Flyback boost converter using Si-MOSFET switch technology; Fuel cells; Gallium nitrides; High electron mobility transistors; Inverters; Low voltage; Metal oxide semiconductors; MOSFETs; Renewable energy sources; Renewable resources; Semiconductor devices; Silicon; Switches; Switching; Topology; Transistors; Voltage converters (DC to DC)
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi13071085

This paper examines the design and analysis of DC–DC converters for high-power and low-voltage applications such as renewable energy sources (RESs) and comparisons between converters based on switch stresses and efficiency. The RESs including photovoltaic arrays and fuel cell stacks must have enhanced output voltages, such as 380 V DC in the case of a full bridge inverter or 760 V DC in the case of a half bridge inverter, in order to interface with the 220 V AC grid-connected power system. One of the primary difficulties in developing renewable energy systems is enhancing DC–DC converters’ efficiency to enable high step-up voltage conversion with high efficiency and low voltage stress. In the present work, the efficiency, current, and voltage stress of switches of an isolated Flyback boost converter, simple DC–DC Boost converter, and an Interleaved boost converter, are explored and studied relatively. The most suitable and optimized options with a high efficiency and low switching stress are investigated. The more suitable topology is designed and analyzed for the switch technology based on the Silicon-Metal Oxide Semiconductor Field Effect Transistor (Si-MOSFET) and the Gallium Nitride-High Electron Mobility Transistor (GaN-HEMT). The Analytical approach is analyzed in this paper based on efficiency and switching stress. It is explored that GaN HEMT based Flyback boost converter is the best. Finally, the future direction for further improving the efficiency of the proposed boost converter is investigated.