Controlling resistive switching behavior in the solution processed SiO2-x device by the insertion of TiO2 nanoparticles

• Published in: Scientific reports 2022-05, Vol.12 (1), p.8405-8405, Article 8405
• Main Authors: Kwon, Sera, Kim, Min-Jung, Lim, Dong-Hyeok, Jeong, Kwangsik, Chung, Kwun-Bum
• Format: Article
• Language: English
• Subjects: 639/301/1005; 639/301/357; 639/766/1130; 639/766/119; 639/766/25; 639/925/357; 639/925/927; Humanities and Social Sciences; multidisciplinary; Nanoparticles; Rupture; Science; Science (multidisciplinary); Silicon dioxide; Titanium dioxide
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-022-12476-y

The resistive switching behavior of the solution processed SiO x device was investigated by inserting TiO 2 nanoparticles (NPs). Compared to the pristine SiO x device, the TiO 2 NPs inserted SiO x (SiO x @TiO 2 NPs) device achieves outstanding switching characteristics, namely a higher ratio of SET/RESET, lower operating voltages, improved cycle-to-cycle variability, faster switching speed, and multiple-RESET states. Density functional theory calculation (DFT) and circuit breaker simulation (CB) were used to detail the origin of the outstanding switching characteristic of the SiO x @TiO 2 NPs. The improvement in resistive switching is mainly based on the difference in formation/rupture of the conductive path in the SiO 2 and SiO 2 @TiO 2 NPs devices. In particular, the reduction of resistance and lower switching voltage of TiO 2 NPs control the formation and rupture of the conductive path to achieve more abrupt switching between SET/RESET with higher on/off ratio. This method of combined DFT calculation and CB offers a promising approach for high-performance non-volatile memory applications.