Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of l...

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Bibliographic Details
Published in:Scientific reports 2023-11, Vol.13 (1), p.21007-21007, Article 21007
Main Authors: Fakhri, Makram A., Jabbar, Haneen D., AbdulRazzaq, Mohammed Jalal, Salim, Evan T., Azzahrani, Ahmad S., Ibrahim, Raed Khalid, Ismail, Raid A.
Format: Article
Language:English
Subjects:
639/301
639/624
639/925
Electrical properties
Electrochemistry
Etching
Fabrication
Gallium
Humanities and Social Sciences
Lasers
multidisciplinary
Photons
Science
Science (multidisciplinary)
Silicon
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Summary:In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of laser fluence. XRD studies revealed that the GaN films deposited on porous silicon were nanocrystalline, exhibiting a hexagonal wurtzite structure along the (100) plane. Spectroscopic property results revealed that the photoluminescence PL emission peaks of the gallium nitride over porous silicon (GaN/PSi) sample prepared at 795 mJ/mm 2 were centered at 260 nm and 624 nm. According to topographical and morphological analyses, the deposited film consisted of spherical grains with an average diameter of 178.8 nm and a surface roughness of 50.61 nm. The surface of the prepared films exhibited a cauliflower-like morphology. The main figures of merit of the nanostructured GaN/P-Si photodetectors were studied in the spectral range of 350–850 nm. The responsivity, detectivity, and external quantum efficiency of the photodetector at 575 nm under − 3 V were 19.86 A/W, 8.9 × 10 12 Jones, and 50.89%, respectively. Furthermore, the photodetector prepared at a laser fluence of 795 mJ/mm 2 demonstrates a switching characteristic, where the rise time and fall time are measured to be 363 and 711 μs, respectively.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-023-47955-3