Dissolution of donor-vacancy clusters in heavily doped n-type germanium

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millise...

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Bibliographic Details
Published in:New journal of physics 2020-12, Vol.22 (12), p.123036
Main Authors: Prucnal, Slawomir, Liedke, Maciej O, Wang, Xiaoshuang, Butterling, Maik, Posselt, Matthias, Knoch, Joachim, Windgassen, Horst, Hirschmann, Eric, Berencén, Yonder, Rebohle, Lars, Wang, Mao, Napoltani, Enrico, Frigerio, Jacopo, Ballabio, Andrea, Isella, Giovani, Hübner, René, Wagner, Andreas, Bracht, Hartmut, Helm, Manfred, Zhou, Shengqiang
Format: Article
Language:English
Subjects:
Annealing
Carrier density
Clusters
Coordination compounds
Dissolution
doping
Electrical measurement
flash lamp annealing
Flash lamps
Germanium
Mass spectrometry
Metal oxide semiconductors
Molecular beam epitaxy
Phosphorus
Physics
Positron annihilation
positron annihilation lifetime spectroscopy
Radiation
Scientific imaging
Secondary ion mass spectrometry
Vacancies
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Summary:The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n ⩽ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/abc466