4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matc...

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Bibliographic Details
Published in:Scientific reports 2021-10, Vol.11 (1), p.20039-8, Article 20039
Main Authors: Bugu, Sinan, Nishiyama, Shimpei, Kato, Kimihiko, Liu, Yongxun, Murakami, Shigenori, Mori, Takahiro, Ferrus, Thierry, Kodera, Tetsuo
Format: Article
Language:English
Subjects:
639/766/25
639/766/483/2802
639/766/483/481
Helium
Humanities and Social Sciences
multidisciplinary
Quantum dots
Radio frequency
Science
Science (multidisciplinary)
Silicon
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Summary:We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-99560-x