Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam

MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dos...

Full description

Saved in:
Bibliographic Details
Main Authors: Gonçalves Filho, Luiz C., Monte, David S., Barros, Fabio R., Santos, Luiz A. P.
Format: Conference Proceeding
Language:English
Subjects:
Diagnostic systems
Dosimeter
Linear functions
MOSFET
MOSFETs
Photon beams
Radiation
Radiation detectors
Radiation dosage
Radiology
Sensitivity analysis
Threshold voltage
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.
ISSN:2100-014X
2101-6275
2100-014X
DOI:10.1051/epjconf/201817009010