DEGRADATION OF VDMOSFET BY HEAVY ION IRRADIATIONS

This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental obs...

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Bibliographic Details
Published in:Active and Passive Electronic Components 2000, Vol.2000 (4), p.i265-282
Main Authors: SALAME, C, PELANCHON, F, MIALHE, P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
fast surface states
Field effect devices
Hot-holes
ionization radiation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
transistor degradation
Transistors
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Summary:This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.
ISSN:0882-7516
1563-5031
DOI:10.1155/2000/90585