DEGRADATION OF VDMOSFET BY HEAVY ION IRRADIATIONS

This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental obs...

Full description

Saved in:
Bibliographic Details
Published in:Active and Passive Electronic Components 2000, Vol.2000 (4), p.i265-282
Main Authors: SALAME, C, PELANCHON, F, MIALHE, P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
fast surface states
Field effect devices
Hot-holes
ionization radiation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
transistor degradation
Transistors
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-a3765-101b1ec5fd7a1c250b8f405c3b5489ee7b43a84bb585f91bada0a1cefe7d24c63
cites
container_end_page 282
container_issue 4
container_start_page i265
container_title Active and Passive Electronic Components
container_volume 2000
creator SALAME, C
PELANCHON, F
MIALHE, P
description This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.
doi_str_mv 10.1155/2000/90585
format article
fullrecord <record><control><sourceid>proquest_doaj_</sourceid><recordid>TN_cdi_doaj_primary_oai_doaj_org_article_fa2597ed5c7e498ab74efd6a762771e1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><airiti_id>P20151214003_200012_201611010004_201611010004_i265_282</airiti_id><doaj_id>oai_doaj_org_article_fa2597ed5c7e498ab74efd6a762771e1</doaj_id><sourcerecordid>27253114</sourcerecordid><originalsourceid>FETCH-LOGICAL-a3765-101b1ec5fd7a1c250b8f405c3b5489ee7b43a84bb585f91bada0a1cefe7d24c63</originalsourceid><addsrcrecordid>eNpVkcFuEzEQhi0EEqFw4Qn2gDggLfXYnrX3GJq0XaklqC2VerJmvTZytM22dnLg7XGSCsRpNPbnb0a_GfsI_CsA4qngnJ-2HA2-YjPARtbIJbxmM26MqDVC85a9y3ldMMlNO2OwWF7czBfzu271vVqdV_eL69Xt-fKu-vZQXS7n9w_V_qK7KUx3gG7fszeBxuw_vNQT9rPwZ5f11eqiO5tf1SR1gzVw6ME7DIMmcAJ5b4Li6GSPyrTe615JMqrvy66hhZ4G4gX0wetBKNfIE9YdvcNEa_uU4iOl33aiaA8HU_plKW2jG70NJLDVfkCnvWoN9Vr5MDSkG6E1eCiuz0fXU5qedz5v7WPMzo8jbfy0y1ZogRJAFfDLEXRpyjn58HcwcLtP2O4TtoeEC_zpxUrZ0RgSbVzM_14owRFlwa6PGMUUt9Gup13alOTsD8EBQYAqn3HwgigFGijZlU7930TRlOlGyD8DzIiF</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>27253114</pqid></control><display><type>article</type><title>DEGRADATION OF VDMOSFET BY HEAVY ION IRRADIATIONS</title><source>IngentaConnect Journals</source><source>Wiley Open Access</source><creator>SALAME, C ; PELANCHON, F ; MIALHE, P</creator><creatorcontrib>SALAME, C ; PELANCHON, F ; MIALHE, P</creatorcontrib><description>This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.</description><identifier>ISSN: 0882-7516</identifier><identifier>EISSN: 1563-5031</identifier><identifier>DOI: 10.1155/2000/90585</identifier><identifier>CODEN: APECEZ</identifier><language>eng</language><publisher>Abingdon: Hindawi Limiteds</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; fast surface states ; Field effect devices ; Hot-holes ; ionization radiation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; transistor degradation ; Transistors</subject><ispartof>Active and Passive Electronic Components, 2000, Vol.2000 (4), p.i265-282</ispartof><rights>2000 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a3765-101b1ec5fd7a1c250b8f405c3b5489ee7b43a84bb585f91bada0a1cefe7d24c63</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=1420553$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SALAME, C</creatorcontrib><creatorcontrib>PELANCHON, F</creatorcontrib><creatorcontrib>MIALHE, P</creatorcontrib><title>DEGRADATION OF VDMOSFET BY HEAVY ION IRRADIATIONS</title><title>Active and Passive Electronic Components</title><description>This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>fast surface states</subject><subject>Field effect devices</subject><subject>Hot-holes</subject><subject>ionization radiation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>transistor degradation</subject><subject>Transistors</subject><issn>0882-7516</issn><issn>1563-5031</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNpVkcFuEzEQhi0EEqFw4Qn2gDggLfXYnrX3GJq0XaklqC2VerJmvTZytM22dnLg7XGSCsRpNPbnb0a_GfsI_CsA4qngnJ-2HA2-YjPARtbIJbxmM26MqDVC85a9y3ldMMlNO2OwWF7czBfzu271vVqdV_eL69Xt-fKu-vZQXS7n9w_V_qK7KUx3gG7fszeBxuw_vNQT9rPwZ5f11eqiO5tf1SR1gzVw6ME7DIMmcAJ5b4Li6GSPyrTe615JMqrvy66hhZ4G4gX0wetBKNfIE9YdvcNEa_uU4iOl33aiaA8HU_plKW2jG70NJLDVfkCnvWoN9Vr5MDSkG6E1eCiuz0fXU5qedz5v7WPMzo8jbfy0y1ZogRJAFfDLEXRpyjn58HcwcLtP2O4TtoeEC_zpxUrZ0RgSbVzM_14owRFlwa6PGMUUt9Gup13alOTsD8EBQYAqn3HwgigFGijZlU7930TRlOlGyD8DzIiF</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>SALAME, C</creator><creator>PELANCHON, F</creator><creator>MIALHE, P</creator><general>Hindawi Limiteds</general><general>Taylor and Francis</general><general>Hindawi Limited</general><scope>188</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>DOA</scope></search><sort><creationdate>2000</creationdate><title>DEGRADATION OF VDMOSFET BY HEAVY ION IRRADIATIONS</title><author>SALAME, C ; PELANCHON, F ; MIALHE, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a3765-101b1ec5fd7a1c250b8f405c3b5489ee7b43a84bb585f91bada0a1cefe7d24c63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>fast surface states</topic><topic>Field effect devices</topic><topic>Hot-holes</topic><topic>ionization radiation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>transistor degradation</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SALAME, C</creatorcontrib><creatorcontrib>PELANCHON, F</creatorcontrib><creatorcontrib>MIALHE, P</creatorcontrib><collection>Airiti Library</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Open Access: DOAJ - Directory of Open Access Journals</collection><jtitle>Active and Passive Electronic Components</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SALAME, C</au><au>PELANCHON, F</au><au>MIALHE, P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>DEGRADATION OF VDMOSFET BY HEAVY ION IRRADIATIONS</atitle><jtitle>Active and Passive Electronic Components</jtitle><date>2000</date><risdate>2000</risdate><volume>2000</volume><issue>4</issue><spage>i265</spage><epage>282</epage><pages>i265-282</pages><issn>0882-7516</issn><eissn>1563-5031</eissn><coden>APECEZ</coden><abstract>This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. Device degradations due to the hot carriers junction avalanche are studied by a physical parameters extraction method, leading to an understanding of the degradation processes. Results show that a protective resistor load can reduce the degradation effect in the device.</abstract><cop>Abingdon</cop><pub>Hindawi Limiteds</pub><doi>10.1155/2000/90585</doi><tpages>18</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0882-7516
ispartof Active and Passive Electronic Components, 2000, Vol.2000 (4), p.i265-282
issn 0882-7516
1563-5031
language eng
recordid cdi_doaj_primary_oai_doaj_org_article_fa2597ed5c7e498ab74efd6a762771e1
source IngentaConnect Journals; Wiley Open Access
subjects Applied sciences
Electronics
Exact sciences and technology
fast surface states
Field effect devices
Hot-holes
ionization radiation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
transistor degradation
Transistors
title DEGRADATION OF VDMOSFET BY HEAVY ION IRRADIATIONS
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T16%3A34%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_doaj_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=DEGRADATION%20OF%20VDMOSFET%20BY%20HEAVY%20ION%20IRRADIATIONS&rft.jtitle=Active%20and%20Passive%20Electronic%20Components&rft.au=SALAME,%20C&rft.date=2000&rft.volume=2000&rft.issue=4&rft.spage=i265&rft.epage=282&rft.pages=i265-282&rft.issn=0882-7516&rft.eissn=1563-5031&rft.coden=APECEZ&rft_id=info:doi/10.1155/2000/90585&rft_dat=%3Cproquest_doaj_%3E27253114%3C/proquest_doaj_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a3765-101b1ec5fd7a1c250b8f405c3b5489ee7b43a84bb585f91bada0a1cefe7d24c63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=27253114&rft_id=info:pmid/&rft_airiti_id=P20151214003_200012_201611010004_201611010004_i265_282&rfr_iscdi=true