Surface-effect enhanced magneto-electric coupling in FePt/PMN-PT multiferroic heterostructures

A series of FePt films with different film thickness are deposited on Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) substrates. A standard symmetric ‘Butterfly’ shaped Δ M / M - E d c loops is obtained in 8 nm FePt/PMN-PT heterostrucuture via strain mediated magnetoelectric coupling. For the 3 nm FePt/PMN-PT het...

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Bibliographic Details
Published in:AIP advances 2017-05, Vol.7 (5), p.055833-055833-7
Main Authors: Yang, Y. T., Li, J., Peng, X. L., Hong, B., Wang, X. Q., Ge, H. L., Wang, D. H., Du, Y. W.
Format: Article
Language:English
Subjects:
Coupling
Electric polarization
Ferroelectric materials
Ferroelectricity
Film thickness
Heterostructures
Information storage
Intermetallic compounds
Iron compounds
Lead titanates
Platinum compounds
Substrates
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Summary:A series of FePt films with different film thickness are deposited on Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) substrates. A standard symmetric ‘Butterfly’ shaped Δ M / M - E d c loops is obtained in 8 nm FePt/PMN-PT heterostrucuture via strain mediated magnetoelectric coupling. For the 3 nm FePt/PMN-PT heterostructure, the loop-like in-plane magnetization (M) -E curve shares a similar shape with the electric polarization of PMN-PT as a function of electric field. The value of M S shows a dramatic change of 30.9% with E dc changing from 0 to 8 kV/cm, this giant magnetoelectric effect in 3 nm FePt/PMN-PT heterostructure results from the remnant polarization induced charge on FePt/PMN-PT interface via the screening charge effect. The enhanced magnetoelectric coupling in thin magnetic/ferroelectric heterostructures opens a promising avenue for the design of ultralow power magnetoelectric devices and information storage devices.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4978588