Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at differen...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-04, Vol.11 (5), p.1173
Main Authors: Zhang, Xiao-Ying, Yang, Yue, Zhang, Zhi-Xuan, Geng, Xin-Peng, Hsu, Chia-Hsun, Wu, Wan-Yu, Lien, Shui-Yang, Zhu, Wen-Zhang
Format: Article
Language:English
Subjects:
Annealing
Argon
Atomic force microscopes
Atomic force microscopy
atomic layer deposition
Atomic layer epitaxy
Chemical vapor deposition
Contact angle
Film growth
Fourier transforms
Infrared spectroscopy
Insulation
Investigations
Oxygen
Oxygen plasma
oxygen plasma power
Plasma etching
Quantum dots
Refractivity
Silicon dioxide
Silicon oxide
Silicon oxides
Silicon wafers
SiO2 thin film
Spectrum analysis
Thin films
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Summary:In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11051173