The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffu...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Switzerland), 2021-09, Vol.11 (9), p.2396
Main Authors: Davydov, Valery, Roginskii, Evgenii M., Kitaev, Yuri, Smirnov, Alexander, Eliseyev, Ilya, Zavarin, Eugene, Lundin, Wsevolod, Nechaev, Dmitrii, Jmerik, Valentin, Smirnov, Mikhail, Pristovsek, Markus, Shubina, Tatiana
Format: Article
Language:English
Subjects:
density functional theory
Diffusion
Diffusion effects
Gallium nitrides
GaN/AlN superlattices
Interdiffusion
Interfaces
lattice dynamics
metal-organic vapor phase epitaxy
Molecular beam epitaxy
Nitrogen
Phonons
Raman spectra
Raman spectroscopy
random-element isodisplacement model
Spectrum analysis
Superlattices
Wurtzite
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Summary:We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp interfaces and with different degree of interface diffusion are simulated by ab initio calculations and within the framework of the random-element isodisplacement model. The comparison of the results of theoretical calculations and experimental data obtained on PA MBE and MOVPE grown SLs, showed that the bands related to A1(LO) confined phonons are very sensitive to the degree of interface diffusion. As a result, a correlation between the Raman spectra in the range of A1(LO) confined phonons and the interface quality in SLs is obtained. This opens up new possibilities for the analysis of the structural characteristics of short-period GaN/AlN SLs using Raman spectroscopy.
ISSN:2079-4991
2079-4991
DOI:10.3390/nano11092396