Evidence of cluster dipole states in germanium detectors operating at temperatures below 10 K

By studying charge trapping in germanium detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used i...

Full description

Saved in:
Bibliographic Details
Published in:AIP advances 2022-06, Vol.12 (6), p.065113-065113-6
Main Authors: Mei, D.-M., Panth, R., Kooi, K., Mei, H., Bhattarai, S., Raut, M., Acharya, P., Wang, G.-J.
Format: Article
Language:English
Subjects:
Alpha particles
Alpha rays
Bias
Clusters
Current carriers
Detectors
Dipoles
Electric potential
Electrons
Germanium
Impurities
Sensors
Trapping
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:By studying charge trapping in germanium detectors operating at temperatures below 10 K, we demonstrate for the first time that the formation of cluster dipole states from residual impurities is responsible for charge trapping. Two planar detectors with different impurity levels and types are used in this study. When drifting the localized charge carriers created by α particles from the top surface across a detector at a lower bias voltage, significant charge trapping is observed when compared to operating at a higher bias voltage. The amount of charge trapping shows a strong dependence on the type of charge carriers. Electrons are trapped more than holes in a p-type detector, while holes are trapped more than electrons in an n-type detector. When both electrons and holes are drifted simultaneously using the widespread charge carriers created by γ rays inside the detector, the amount of charge trapping shows no dependence on the polarity of bias voltage.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0094194