Switching Dynamics and Improved Efficiency of Free‐Standing Antiferroelectric Capacitors

The switching dynamics of antiferroelectric lead zirconate (PbZrO3) freestanding capacitors compared to their epitaxial counterparts is reported. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and...

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Bibliographic Details
Published in:Advanced electronic materials 2024-10, Vol.10 (10), p.n/a
Main Authors: Saeed, Umair, Pesquera, David, Liu, Ying, Fina, Ignasi, Ganguly, Saptam, Santiso, José, Padilla‐Pantoja, Jessica, Caicedo Roque, José Manuel, Liao, Xiaozhou, Catalan, Gustau
Format: Article
Language:English
Subjects:
antiferroelectrics
freestanding membranes
Kolmogorov‐Avrami‐Ishibashi model
Rayleigh's coefficient
Williamson‐Hall plot
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Summary:The switching dynamics of antiferroelectric lead zirconate (PbZrO3) freestanding capacitors compared to their epitaxial counterparts is reported. Frequency dependence of hysteresis indicates that freestanding capacitors exhibit a lower dispersion of switching fields, lower residual polarization, and faster switching response as compared to epitaxially‐clamped capacitors. As a consequence, freestanding capacitor membranes exhibit better energy storage density and efficiency. Antiferroelectric capacitors of PbZrO3 (300 nm) sandwiched between 35 nm top and bottom SrRuO3 electrodes declamped from the growth substrate (freestanding) are fabricated. The results demonstrate that the freestanding capacitors show better functionality (higher energy storage density and efficiency) despite having similar structural (strain) state when compared to their epitaxial counterparts, opening up avenues for new device applications.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202400102