Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry

Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor a...

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Bibliographic Details
Published in:Nature communications 2021-06, Vol.12 (1), p.3559-3559, Article 3559
Main Authors: Hong, Seongin, Zagni, Nicolò, Choo, Sooho, Liu, Na, Baek, Seungho, Bala, Arindam, Yoo, Hocheon, Kang, Byung Ha, Kim, Hyun Jae, Yun, Hyung Joong, Alam, Muhammad Ashraful, Kim, Sunkook
Format: Article
Language:English
Subjects:
639/166/987
639/925/927
Circuits
Computer applications
Gating
Humanities and Social Sciences
Light
Molybdenum disulfide
multidisciplinary
Photoresponse
Phototransistors
Pixels
Science
Science (multidisciplinary)
Semiconductor devices
Sensor arrays
Sensors
Switching
Transistors
Transition metal compounds
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Summary:Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS 2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS 2 switching transistors and 2D MoS 2 phototransistors. The maximum photoresponsivity ( R ph ) of the bilayer MoS 2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W −1 . With the aid of computational modeling, we find that the main mechanism for the high R ph of the bilayer MoS 2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS 2 active pixel image sensor array are successfully investigated using light stencil projection. Here, the authors report the realization of an active pixel image sensor array composed by 64 pairs of switching transistors and phototransistors, based on wafer-scale bilayer MoS 2 . The device exhibits sensitive photoresponse under RGB light illumination, showing the potential of 2D MoS 2 for image sensing applications.
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-021-23711-x