Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS...

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Bibliographic Details
Published in:Sensors (Basel, Switzerland) Switzerland), 2020-10, Vol.20 (19), p.5701
Main Authors: Manh Hung, Nguyen, Nguyen, Chuong V., Arepalli, Vinaya Kumar, Kim, Jeha, Duc Chinh, Nguyen, Nguyen, Tien Dai, Seo, Dong-Bum, Kim, Eui-Tae, Kim, Chunjoong, Kim, Dojin
Format: Article
Language:English
Subjects:
Density functional theory
Electromagnetism
Flexible components
flexible sensor
Gas sensors
Gases
Glass substrates
Heat
High resistance
Illumination
Low temperature
N-type semiconductors
Polyethylene terephthalate
Radiation
Recovery time
Room temperature
Sensors
SnS thin film
Spectrum analysis
Thin films
UV illumination
vacancy
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Summary:Tin sulfide (SnS) is known for its effective gas-detecting ability at low temperatures. However, the development of a portable and flexible SnS sensor is hindered by its high resistance, low response, and long recovery time. Like other chalcogenides, the electronic and gas-sensing properties of SnS strongly depend on its surface defects. Therefore, understanding the effects of its surface defects on its electronic and gas-sensing properties is a key factor in developing low-temperature SnS gas sensors. Herein, using thin SnS films annealed at different temperatures, we demonstrate that SnS exhibits n-type semiconducting behavior upon the appearance of S vacancies. Furthermore, the presence of S vacancies imparts the n-type SnS sensor with better sensing performance under UV illumination at room temperature (25 °C) than that of a p-type SnS sensor. These results are thoroughly investigated using various experimental analysis techniques and theoretical calculations using density functional theory. In addition, n-type SnS deposited on a polyimide substrate can be used to fabricate high-stability flexible sensors, which can be further developed for real applications.
ISSN:1424-8220
1424-8220
DOI:10.3390/s20195701