Channel Length Modulation in a Polystyrene Insulated Organic Field Effect Transistor Using PEDOT: PSS Composite Electrode

The Organic Field EffectTransistor (OFET) with channel length modulation was fabricated by spin coatingmethod using a Poly(3-hexylthiophene) (P3HT) and the Polystyrene (PS) insulatoron a prepatterned as source-drain Indium thin oxide (ITO) substrate. Thepoly(3,4-ethylenedioxythiophene) polystyrene s...

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Bibliographic Details
Published in:Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi 2018-12, Vol.22 (6), p.1493-1499
Main Author: Ahmet Demir
Format: Article
Language:English
Subjects:
insulators
p3ht
pedot: pss
polimer kapı elektrodu
polistiren
polymer gate electrode
polystyrene
transparent ofets
yalıtkanlar
şeffaf ofetler
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Summary:The Organic Field EffectTransistor (OFET) with channel length modulation was fabricated by spin coatingmethod using a Poly(3-hexylthiophene) (P3HT) and the Polystyrene (PS) insulatoron a prepatterned as source-drain Indium thin oxide (ITO) substrate. Thepoly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was usedas gate electrode. So, the structure ofOFET device is obtained as ITO/P3HT/PS/PEDOT:PSS. The ITO/PS/PEDOT:PSSstructure was prepared using same method for capacitance measurements of apolymer insulator. Electrical characterization of OFET devices were held intotal darkness and in air ambient for the purpose of achieving output andtransfer current-voltage (I-V)characteristics. The main parameters such as the threshold voltage (VTh), field effect mobility (mFET)and current on/off ratio (Ion/off)of the OFET devices were extracted from capacitance-frequency (C-f) plot of the ITO/PS/PEDOT:PSSstructure. It was found that fabricatedPS-OFETs exhibit good device performance such as low VTh, remarkable mobility, and Ion/offvalues.
ISSN:2147-835X
DOI:10.16984/saufenbilder.343272